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File name: | phd10n10e_1.pdf [preview phd10n10e 1] |
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Mfg: | Philips |
Model: | phd10n10e 1 🔎 |
Original: | phd10n10e 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips phd10n10e_1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 27-07-2020 |
User: | Anonymous |
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File name phd10n10e_1.pdf Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suuitable for VDS Drain-source voltage 100 V surface mounting. The device is ID Drain current (DC) 11 A intended for use in Switched Mode Ptot Total power dissipation 60 W Power Supplies (SMPS), motor Tj Junction temperature 175 |
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